Технічний опис APTM50AM38SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 500V, Drain current: 67A, Case: SP4, Electrical mounting: FASTON connectors; screw, On-state resistance: 45mΩ, Pulsed drain current: 360A, Power dissipation: 694W, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Mechanical mounting: screw, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM50AM38SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50AM38SCTG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor кількість в упаковці: 1 шт |
товару немає в наявності |
||
| APTM50AM38SCTG | Виробник : Microsemi Power Products Group |
Description: MOSFET 2N-CH 500V 90A SP4 |
товару немає в наявності |
||
| APTM50AM38SCTG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
||
| APTM50AM38SCTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 500V; 67A; SP4; Idm: 360A; 694W; screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Mechanical mounting: screw Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor |
товару немає в наявності |