Технічний опис APTM50DDA10T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, Semiconductor structure: diode/transistor, Case: SP3, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Technology: POWER MOS 7®, On-state resistance: 0.12Ω, Drain current: 28A, Gate-source voltage: ±30V, Pulsed drain current: 140A, Power dissipation: 312W, Drain-source voltage: 500V, Topology: boost chopper x2; NTC thermistor, Mechanical mounting: screw.
Інші пропозиції APTM50DDA10T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50DDA10T3G | Виробник : Microsemi Power Products Group |
Description: MOSFET 2N-CH 500V 37A SP3 |
товару немає в наявності |
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| APTM50DDA10T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3039 |
товару немає в наявності |
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| APTM50DDA10T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFETDescription: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Semiconductor structure: diode/transistor Case: SP3 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Technology: POWER MOS 7® On-state resistance: 0.12Ω Drain current: 28A Gate-source voltage: ±30V Pulsed drain current: 140A Power dissipation: 312W Drain-source voltage: 500V Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw |
товару немає в наявності |
