Технічний опис APTM50DDA10T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, Technology: POWER MOS 7®, Power dissipation: 312W, Semiconductor structure: diode/transistor, Case: SP3, Drain-source voltage: 500V, Drain current: 28A, On-state resistance: 0.12Ω, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Topology: boost chopper x2; NTC thermistor, Pulsed drain current: 140A, кількість в упаковці: 1 шт.
Інші пропозиції APTM50DDA10T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM50DDA10T3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Technology: POWER MOS 7® Power dissipation: 312W Semiconductor structure: diode/transistor Case: SP3 Drain-source voltage: 500V Drain current: 28A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 140A кількість в упаковці: 1 шт |
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| APTM50DDA10T3G | Виробник : Microsemi Power Products Group |
Description: MOSFET 2N-CH 500V 37A SP3 |
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| APTM50DDA10T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3039 |
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| APTM50DDA10T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Technology: POWER MOS 7® Power dissipation: 312W Semiconductor structure: diode/transistor Case: SP3 Drain-source voltage: 500V Drain current: 28A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 140A |
товар відсутній |