Технічний опис APTM50DDA10T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, On-state resistance: 0.12Ω, Drain current: 28A, Power dissipation: 312W, Drain-source voltage: 500V, Pulsed drain current: 140A, Topology: boost chopper x2; NTC thermistor, Case: SP3, Semiconductor structure: diode/transistor, Technology: POWER MOS 7®, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Gate-source voltage: ±30V.
Інші пропозиції APTM50DDA10T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50DDA10T3G | Виробник : Microsemi Power Products Group |
 Description: MOSFET 2N-CH 500V 37A SP3 |
товару немає в наявності |
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| APTM50DDA10T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3039 |
товару немає в наявності |
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| APTM50DDA10T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A On-state resistance: 0.12Ω Drain current: 28A Power dissipation: 312W Drain-source voltage: 500V Pulsed drain current: 140A Topology: boost chopper x2; NTC thermistor Case: SP3 Semiconductor structure: diode/transistor Technology: POWER MOS 7® Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: ±30V |
товару немає в наявності |