APTM50DDAM65T3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A
Pulsed drain current: 204A
Power dissipation: 390W
Technology: POWER MOS 7®
Drain current: 38A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 78mΩ
Topology: boost chopper x2; NTC thermistor
кількість в упаковці: 1 шт
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Технічний опис APTM50DDAM65T3G MICROCHIP (MICROSEMI)
Description: MOSFET 2N-CH 500V 51A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 51A, Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V, Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP3, Part Status: Active.
Інші пропозиції APTM50DDAM65T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM50DDAM65T3G | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 500V 51A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP3 Part Status: Active |
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| APTM50DDAM65T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3037 |
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| APTM50DDAM65T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A Pulsed drain current: 204A Power dissipation: 390W Technology: POWER MOS 7® Drain current: 38A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 78mΩ Topology: boost chopper x2; NTC thermistor |
товар відсутній |