APTM50DDAM65T3G MICROCHIP TECHNOLOGY

Description: MOSFET 2N-CH 500V 51A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 51A, Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V, Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP3, Part Status: Active.