APTM50DSK10T3G Microsemi Corporation


index.php?option=com_docman&task=doc_download&gid=8176 Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 500V 37A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 37A
Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SP3
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Технічний опис APTM50DSK10T3G Microsemi Corporation

Description: MOSFET 2N-CH 500V 37A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 312W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 37A, Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V, Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP3.