APTM50H15FT1G Microchip Technology

Description: MOSFET 4N-CH 500V 25A SP1, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V, Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 25A, Drain to Source Voltage (Vdss): 500V, Power - Max: 208W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.