APTM50HM35FG MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 74A; SP6C; Topology: H-bridge
Drain-source voltage: 500V
Drain current: 74A
Pulsed drain current: 396A
Power dissipation: 781W
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Topology: H-bridge
Semiconductor structure: transistor/transistor
кількість в упаковці: 1 шт
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Технічний опис APTM50HM35FG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 500V; 74A; SP6C; Topology: H-bridge, Drain-source voltage: 500V, Drain current: 74A, Pulsed drain current: 396A, Power dissipation: 781W, Case: SP6C, Gate-source voltage: ±30V, On-state resistance: 39mΩ, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 7®, Topology: H-bridge, Semiconductor structure: transistor/transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM50HM35FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50HM35FG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 500V 99A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товару немає в наявності |
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| APTM50HM35FG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товару немає в наявності |
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| APTM50HM35FG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 74A; SP6C; Topology: H-bridge Drain-source voltage: 500V Drain current: 74A Pulsed drain current: 396A Power dissipation: 781W Case: SP6C Gate-source voltage: ±30V On-state resistance: 39mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Topology: H-bridge Semiconductor structure: transistor/transistor |
товару немає в наявності |