APTM50HM35FG Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET 4N-CH 500V 99A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 781W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP6
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис APTM50HM35FG Microchip Technology
Description: MOSFET 4N-CH 500V 99A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 781W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 99A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP6.
Інші пропозиції APTM50HM35FG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50HM35FG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товару немає в наявності |
||
| APTM50HM35FG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 74A; SP6C; Topology: H-bridge Electrical mounting: FASTON connectors; screw Mechanical mounting: screw On-state resistance: 39mΩ Gate-source voltage: ±30V Drain current: 74A Pulsed drain current: 396A Power dissipation: 781W Drain-source voltage: 500V Technology: FREDFET; POWER MOS 7® Semiconductor structure: transistor/transistor Topology: H-bridge Type of semiconductor module: MOSFET transistor Case: SP6C |
товару немає в наявності |