Технічний опис APTM50HM75SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw, Case: SP4, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Pulsed drain current: 184A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 500V, Drain current: 34A, On-state resistance: 90mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 357W, кількість в упаковці: 1 шт.
Інші пропозиції APTM50HM75SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM50HM75SCTG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 184A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 34A On-state resistance: 90mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 357W кількість в упаковці: 1 шт |
товару немає в наявності |
||
| APTM50HM75SCTG | Виробник : Microsemi Power Products Group |
Description: MOSFET 4N-CH 500V 46A SP4 |
товару немає в наявності |
||
| APTM50HM75SCTG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules CC4034 |
товару немає в наявності |
||
| APTM50HM75SCTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Pulsed drain current: 184A Type of semiconductor module: MOSFET transistor Drain-source voltage: 500V Drain current: 34A On-state resistance: 90mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 357W |
товару немає в наявності |