APTM50SKM19G

APTM50SKM19G Microchip Technology


2348197-aptm50skm19g-rev3-pdf.pdf Виробник: Microchip Technology
Trans MOSFET N-CH 500V 163A 5-Pin Case SP-6 Tube
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Технічний опис APTM50SKM19G Microchip Technology

Description: MOSFET N-CH 500V 163A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V, Power Dissipation (Max): 1136W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V.

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APTM50SKM19G Виробник : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Power dissipation: 1136W
On-state resistance: 22.5mΩ
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Drain-source voltage: 500V
Pulsed drain current: 652A
Drain current: 122A
кількість в упаковці: 1 шт
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APTM50SKM19G Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 500V 163A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 492 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22400 pF @ 25 V
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APTM50SKM19G Виробник : Microchip Technology APTM50SKM19G_Rev4-3444945.pdf MOSFET Modules PM-MOSFET-7-SP6C
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APTM50SKM19G Виробник : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Power dissipation: 1136W
On-state resistance: 22.5mΩ
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Drain-source voltage: 500V
Pulsed drain current: 652A
Drain current: 122A
товару немає в наявності
В кошику  од. на суму  грн.