Технічний опис APTM50SKM38TG Microsemi
Description: MOSFET N-CH 500V 90A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V.
Інші пропозиції APTM50SKM38TG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTM50SKM38TG | Виробник : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V |
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