APTMC120HM17CT3AG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис APTMC120HM17CT3AG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB, Power dissipation: 750W, Case: SP3F, Semiconductor structure: SiC diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Topology: H-bridge; NTC thermistor, Pulsed drain current: 300A, Drain-source voltage: 1.2kV, Drain current: 116A, On-state resistance: 17mΩ, кількість в упаковці: 1 шт.
Інші пропозиції APTMC120HM17CT3AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APTMC120HM17CT3AG | Виробник : Microchip Technology | Description: POWER MODULE - SIC MOSFET |
товар відсутній |
||
APTMC120HM17CT3AG | Виробник : Microchip Technology | Discrete Semiconductor Modules CC3186 |
товар відсутній |
||
APTMC120HM17CT3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB Power dissipation: 750W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: H-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 116A On-state resistance: 17mΩ |
товар відсутній |