APTMC120HRM40CT3AG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
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Технічний опис APTMC120HRM40CT3AG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F, Power dissipation: 375W, Case: SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: Field Stop; SiC; Trench, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor, Pulsed drain current: 140A, Drain-source voltage: 1.2kV, Drain current: 55A, On-state resistance: 34mΩ, кількість в упаковці: 1 шт.
Інші пропозиції APTMC120HRM40CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTMC120HRM40CT3AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 73A SP3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 375W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Vgs(th) (Max) @ Id: 3V @ 12.5mA Supplier Device Package: SP3 |
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| APTMC120HRM40CT3AG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
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| APTMC120HRM40CT3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Power dissipation: 375W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 55A On-state resistance: 34mΩ |
товар відсутній |