APTMC120HRM40CT3AG Microchip Technology
Виробник: Microchip TechnologyDescription: SIC 2N-CH 1200V 73A SP3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 375W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 12.5mA
Supplier Device Package: SP3
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Технічний опис APTMC120HRM40CT3AG Microchip Technology
Description: SIC 2N-CH 1200V 73A SP3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 375W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V, Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V, Vgs(th) (Max) @ Id: 3V @ 12.5mA, Supplier Device Package: SP3.
Інші пропозиції APTMC120HRM40CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTMC120HRM40CT3AG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
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| APTMC120HRM40CT3AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Semiconductor structure: common emitter; SiC diode/transistor Case: SP3F Type of semiconductor module: MOSFET transistor Mechanical mounting: screw On-state resistance: 34mΩ Drain current: 55A Pulsed drain current: 140A Power dissipation: 375W Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor |
товару немає в наявності |