Технічний опис APTMC170AM60CT1AG Microchip Technology
Description: MOSFET 2N-CH 1700V 50A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 350W, Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V, Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V, Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ), Supplier Device Package: SP1.
Інші пропозиції APTMC170AM60CT1AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTMC170AM60CT1AG | Виробник : MICROCHIP TECHNOLOGY |
 APTMC170AM60CT1AG Transistor modules MOSFET |
товару немає в наявності |
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| APTMC170AM60CT1AG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 1700V 50A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 350W Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 20V Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ) Supplier Device Package: SP1 |
товару немає в наявності |
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| APTMC170AM60CT1AG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |