Технічний опис APTMC170AM60CT1AG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W, Pulsed drain current: 100A, Power dissipation: 350W, Technology: SiC, Drain current: 37A, Drain-source voltage: 1.7kV, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Case: SP1, On-state resistance: 70mΩ, Topology: MOSFET half-bridge + serial diodes; NTC thermistor, кількість в упаковці: 1 шт.
Інші пропозиції APTMC170AM60CT1AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTMC170AM60CT1AG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor кількість в упаковці: 1 шт |
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| APTMC170AM60CT1AG | Виробник : Microsemi Power Products Group |
Description: MOSFET 2N-CH 1700V 53A SP1 |
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| APTMC170AM60CT1AG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
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| APTMC170AM60CT1AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor |
товар відсутній |