APTMC60TL11CT3AG Microchip Technology
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 28A SP3
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 125W
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Three Level Inverter)
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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Технічний опис APTMC60TL11CT3AG Microchip Technology
Description: MOSFET 4N-CH 1200V 28A SP3, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V, Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 125W, Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Three Level Inverter), Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.
Інші пропозиції APTMC60TL11CT3AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| APTMC60TL11CT3AG | Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
В кошику од. на суму грн. |
| APTMC60TL11CT3AG |
|
Виробник: Microsemi
Discrete Semiconductor Modules Power Module - SiC
Discrete Semiconductor Modules Power Module - SiC
товару немає в наявності
В кошику
од. на суму грн.