APTMC60TLM55CT3AG MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Topology: NTC thermistor; three-level inverter; single-phase
Electrical mounting: Press-in PCB
On-state resistance: 52mΩ
Pulsed drain current: 100A
Power dissipation: 263W
Technology: SiC
Mechanical mounting: screw
Case: SP3F
кількість в упаковці: 1 шт
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Технічний опис APTMC60TLM55CT3AG MICROCHIP TECHNOLOGY
Description: SIC 4N-CH 1200V 48A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 250W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V, Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V, Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ), Supplier Device Package: SP3.
Інші пропозиції APTMC60TLM55CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTMC60TLM55CT3AG | Виробник : Microchip Technology |
Description: SIC 4N-CH 1200V 48A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Supplier Device Package: SP3 |
товару немає в наявності |
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| APTMC60TLM55CT3AG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
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| APTMC60TLM55CT3AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 38A Topology: NTC thermistor; three-level inverter; single-phase Electrical mounting: Press-in PCB On-state resistance: 52mΩ Pulsed drain current: 100A Power dissipation: 263W Technology: SiC Mechanical mounting: screw Case: SP3F |
товару немає в наявності |