| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 60.33 грн |
| 100+ | 40.97 грн |
| 500+ | 33.79 грн |
| 1000+ | 26.61 грн |
| 9000+ | 25.92 грн |
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Технічний опис AR4PK-M3/86A Vishay General Semiconductor
Description: DIODE AVALANCHE 800V 1.8A TO277A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 1.8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 120 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Інші пропозиції AR4PK-M3/86A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AR4PK-M3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 800V 1.8A TO277ACurrent - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.8A Capacitance @ Vr, F: 55pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |