Технічний опис AR4PKHM3_A/H Vishay Semiconductors
Description: DIODE AVALANCHE 800V 1.8A TO277A, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 1.8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 120 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount.
Інші пропозиції AR4PKHM3_A/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AR4PKHM3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE AVALANCHE 800V 1.8A TO277APackage / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.8A Capacitance @ Vr, F: 55pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |