Технічний опис AS4C128M8D1-6TINTR ALLIANCE MEMORY
Description: IC DRAM 1GBIT PAR 66TSOP II, Packaging: Tape & Reel (TR), Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 700 ps, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AS4C128M8D1-6TINTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AS4C128M8D1-6TINTR | Виробник : Alliance Memory, Inc. |
 Description: IC DRAM 1GBIT PAR 66TSOP IIPackaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AS4C128M8D1-6TINTR | Виробник : Alliance Memory, Inc. |
Description: IC DRAM 1GBIT PAR 66TSOP II Packaging: Cut Tape (CT) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AS4C128M8D1-6TINTR | Виробник : Alliance Memory |
DRAM 1G, 2.5V, 166MHz 128M x 8 DDR1 |
товару немає в наявності |