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AS4C16M16MSA-6BINTR ALLIANCE MEMORY


20171228_AllianceMemory_256M_LPSDRAM_AS4C16M16MSA-6BINTR_rev1.0_Dec2017.pdf Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
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Технічний опис AS4C16M16MSA-6BINTR ALLIANCE MEMORY

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C, Type of integrated circuit: DRAM memory, Case: FBGA54, Mounting: SMD, Operating temperature: -40...85°C, Operating voltage: 1.7V, Kind of package: reel, Clock frequency: 166MHz, Kind of memory: DDR1; SDRAM, Kind of interface: parallel, Memory capacity: 256Mb, Memory organisation: 16Mx16bit, Access time: 5.5ns.

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AS4C16M16MSA-6BINTR AS4C16M16MSA-6BINTR Виробник : Alliance Memory, Inc. 20171228_AllianceMemory_256M_LPSDRAM_AS4C16M16MSA-6BINTR_rev1.0_Dec2017.pdf Description: IC DRAM 256MBIT PARALLEL 54FBGA
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AS4C16M16MSA-6BINTR AS4C16M16MSA-6BINTR Виробник : Alliance Memory 20171228_AllianceMemory_256M_LPSDRAM_AS4C16M16MSA--1282068.pdf DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
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AS4C16M16MSA-6BINTR Виробник : ALLIANCE MEMORY 20171228_AllianceMemory_256M_LPSDRAM_AS4C16M16MSA-6BINTR_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній