AS4C16M16SB-6TINTR ALLIANCE MEMORY
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
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Технічний опис AS4C16M16SB-6TINTR ALLIANCE MEMORY
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 16Mx16bit, Clock frequency: 166MHz, Access time: 5ns, Case: TSOP54 II, Memory capacity: 256Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel, Operating voltage: 3.3V.
Інші пропозиції AS4C16M16SB-6TINTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AS4C16M16SB-6TINTR | Виробник : Alliance Memory |
 DRAM |
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AS4C16M16SB-6TINTR | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |