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Технічний опис AS4C4M16S-6TAN Alliance Memory
Description: IC DRAM 64MBIT PAR 54TSOP II, Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Memory Organization: 4M x 16, Access Time: 5.4 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 2ns, Grade: Automotive, Supplier Device Package: 54-TSOP II, Memory Format: DRAM, Clock Frequency: 166 MHz, Technology: SDRAM, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 105°C (TA), Memory Type: Volatile, Memory Size: 64Mbit, Mounting Type: Surface Mount, Package / Case: 54-TSOP (0.400", 10.16mm Width), Packaging: Tray.
Інші пропозиції AS4C4M16S-6TAN
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
AS4C4M16S-6TAN | Alliance Memory, Inc. |
 Description: IC DRAM 64MBIT PAR 54TSOP IIQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 4M x 16 Access Time: 5.4 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 2ns Grade: Automotive Supplier Device Package: 54-TSOP II Memory Format: DRAM Clock Frequency: 166 MHz Technology: SDRAM Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
| AS4C4M16S-6TAN |
|
Виробник: Alliance Memory, Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 4M x 16
Access Time: 5.4 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 2ns
Grade: Automotive
Supplier Device Package: 54-TSOP II
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Description: IC DRAM 64MBIT PAR 54TSOP II
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 4M x 16
Access Time: 5.4 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 2ns
Grade: Automotive
Supplier Device Package: 54-TSOP II
Memory Format: DRAM
Clock Frequency: 166 MHz
Technology: SDRAM
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.