AS4C64M16MD1A-5BIN Alliance Memory
на замовлення 624 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 669.06 грн |
| 10+ | 608.06 грн |
| 25+ | 517.4 грн |
| 50+ | 516.06 грн |
Відгуки про товар
Написати відгук
Технічний опис AS4C64M16MD1A-5BIN Alliance Memory
Description: IC DRAM 1GBIT PARALLEL 60FBGA, Packaging: Tray, Package / Case: 60-VFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 60-FBGA (8x9), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5 ns, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції AS4C64M16MD1A-5BIN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AS4C64M16MD1A-5BIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V кількість в упаковці: 300 шт |
товар відсутній |
||
 |
AS4C64M16MD1A-5BIN | Виробник : Alliance Memory, Inc. |
Description: IC DRAM 1GBIT PARALLEL 60FBGA Packaging: Tray Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (8x9) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
|
| AS4C64M16MD1A-5BIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Access time: 6.5ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
товар відсутній |