Технічний опис AS4C64M8D1-5TCN Alliance Memory
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 64Mx8bit, Clock frequency: 200MHz, Case: TSOP66 II, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: in-tray, Operating voltage: 2.5V.
Інші пропозиції AS4C64M8D1-5TCN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| AS4C64M8D1-5TCN | Виробник : ALLIANCE MEMORY |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TCN | Виробник : Alliance Memory, Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP II |
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| AS4C64M8D1-5TCN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |