AS6C1008-55BIN ALLIANCE MEMORY
Виробник: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Mounting: SMD
Case: TFBGA36
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 2.7...5.5V
кількість в упаковці: 480 шт
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Технічний опис AS6C1008-55BIN ALLIANCE MEMORY
Description: IC SRAM 1MBIT PARALLEL 36TFBGA, Packaging: Tray, Package / Case: 36-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 36-TFBGA (6x8), Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 128K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AS6C1008-55BIN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AS6C1008-55BIN | Виробник : Alliance Memory, Inc. |
Description: IC SRAM 1MBIT PARALLEL 36TFBGA Packaging: Tray Package / Case: 36-TFBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-TFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AS6C1008-55BIN | Виробник : Alliance Memory |
SRAM LP SRAM, 1Mb, 128K x 8, 2.7 - 5.5V, 36pin TFBGA, 55ns, Industrial Temp - Tray |
товару немає в наявності |
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| AS6C1008-55BIN | Виробник : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Mounting: SMD Case: TFBGA36 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 55ns Integrated circuit features: LPC Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 2.7...5.5V |
товару немає в наявності |