AS6C1008-55PCN

Виробник: ALLIANCE
Asynchronous SRAM, 1Mbit (128k x 8bit), 55ns, 2.4V?5.5V, 0?70°C AS6C1008-55PCN, LP621024D-55LLF, BS62LV1027PIP55, K6X1008C2D-DF55. 628128/55 PDIP32 PS1024/8/055
кількість в упаковці: 13 шт

Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; DIP32; 600mils
Mounting: THT
Case: DIP32
Operating voltage: 2.7...5.5V
Operating temperature: 0...70°C
Access time: 55ns
IC width: 600mils
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Integrated circuit features: LPC
Kind of interface: parallel

Виробник: Alliance Memory, Inc.
Description: IC SRAM 1MBIT PARALLEL 32DIP
Packaging: Tube
Package / Case: 32-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-PDIP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified

Виробник: Alliance Memory
SRAM LP SRAM, 1Mb, 128K x 8, 2.7 - 5.5V, 32pin PDIP, 55ns, Commercial Temp - Tube

Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C1008-55PCN - SRAM, Asynchron, 1 Mbit, 128K x 8 Bit, DIP, 32 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
IC-Montage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
IC-Gehäuse / Bauform: DIP
Speicherdichte: 1Mbit
MSL: -
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -
Betriebstemperatur, min.: 0°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 32Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 70°C
SRAM: Asynchron
Speicherkonfiguration: 128K x 8 Bit
SVHC: No SVHC (27-Jun-2024)