AS6C2008-55BINTR ALLIANCE MEMORY
Виробник: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating temperature: -40...85°C
кількість в упаковці: 2000 шт
товару немає в наявності
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Технічний опис AS6C2008-55BINTR ALLIANCE MEMORY
Description: IC SRAM 2MBIT PARALLEL 36TFBGA, Packaging: Tape & Reel (TR), Package / Case: 36-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 36-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 256K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AS6C2008-55BINTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AS6C2008-55BINTR | Виробник : Alliance Memory, Inc. |
Description: IC SRAM 2MBIT PARALLEL 36TFBGA Packaging: Tape & Reel (TR) Package / Case: 36-TFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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AS6C2008-55BINTR | Виробник : Alliance Memory |
SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM |
товару немає в наявності |
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| AS6C2008-55BINTR | Виробник : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 3.3V Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating temperature: -40...85°C |
товару немає в наявності |