AS6C2008A-55BINTR Alliance Memory, Inc.
Виробник: Alliance Memory, Inc.Description: IC SRAM 2MBIT PARALLEL 36TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-TFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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Технічний опис AS6C2008A-55BINTR Alliance Memory, Inc.
Description: IC SRAM 2MBIT PARALLEL 36TFBGA, Packaging: Tape & Reel (TR), Package / Case: 36-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 36-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 256K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AS6C2008A-55BINTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| AS6C2008A-55BINTR | Виробник : Alliance Memory |
SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM |
товару немає в наявності |
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| AS6C2008A-55BINTR | Виробник : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.7...5.5V Access time: 55ns Case: TFBGA36 Mounting: SMD Integrated circuit features: LPC Operating temperature: -40...85°C |
товару немає в наявності |