Технічний опис AT28C256E-15FM/883 Microchip Technology
Description: IC EEPROM 256KBIT PAR 28FLATPK, Packaging: Tube, Package / Case: 28-CFlatPack, Mounting Type: Surface Mount, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -55°C ~ 125°C (TC), Voltage - Supply: 4.5V ~ 5.5V, Technology: EEPROM, Memory Format: EEPROM, Supplier Device Package: 28-FlatPack, Ceramic Bottom-Brazed, Part Status: Active, Write Cycle Time - Word, Page: 10ms, Memory Interface: Parallel, Access Time: 150 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AT28C256E-15FM/883
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| AT28C256E-15FM/883 | Виробник : Microchip Technology |
 EEPROM Parallel 256K-bit 32K x 8 5V 28-Pin CBFPAK Tube |
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AT28C256E-15FM/883 | Виробник : Microchip Technology |
Description: IC EEPROM 256KBIT PAR 28FLATPK Packaging: Tube Package / Case: 28-CFlatPack Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-FlatPack, Ceramic Bottom-Brazed Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 150 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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AT28C256E-15FM883 | Виробник : Atmel |
Description: IC EEPROM 256KBIT PAR 28FLATPK Packaging: Bulk Package / Case: 28-CFlatPack Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TC) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-FlatPack, Ceramic Bottom-Brazed Part Status: Active Write Cycle Time - Word, Page: 10ms Memory Interface: Parallel Access Time: 150 ns Memory Organization: 32K x 8 |
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AT28C256E-15FM/883 | Виробник : Microchip Technology |
EEPROM 256K HI-ENDURANCE SDP - 150NS |
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