Технічний опис ATP112-TL-H ON Semiconductor
Description: MOSFET P-CH 60V 25A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Supplier Device Package: ATPAK, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V.
Інші пропозиції ATP112-TL-H
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ATP112-TL-H | Виробник : ON Semiconductor |
 Trans MOSFET P-CH Si 60V 25A 3-Pin(2+Tab) ATPAK T/R |
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| ATP112-TL-H | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -75A; 40W; ATPAK Case: ATPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -25A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -75A кількість в упаковці: 3000 шт |
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ATP112-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
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ATP112-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Cut Tape (CT) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
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| ATP112-TL-H | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -75A; 40W; ATPAK Case: ATPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -25A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -75A |
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