Технічний опис ATP302-TL-H ON Semiconductor
Description: MOSFET P-CH 60V 70A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V, Power Dissipation (Max): 70W (Tc), Supplier Device Package: ATPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V.
Інші пропозиції ATP302-TL-H
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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ATP302-TL-H | onsemi |
Description: MOSFET P-CH 60V 70A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V Power Dissipation (Max): 70W (Tc) Supplier Device Package: ATPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
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ATP302-TL-H | onsemi |
Description: MOSFET P-CH 60V 70A ATPAK Current - Continuous Drain (Id) @ 25°C: 70A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: ATPAK (2 leads+tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: ATPAK Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
ATP302-TL-H | onsemi |
 MOSFET POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
 |
ATP302-TL-H | ONSEMI |
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 70 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 70 Gate-Source-Schwellenspannung, max.: 2.6 Verlustleistung: 70 Bauform - Transistor: ATPAK Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.01 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.01 SVHC: Lead (19-Jan-2021) |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
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ATP302-TL-H | ONSEMI |
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage Verlustleistung: 70 Kanaltyp: p-Kanal Drain-Source-Durchgangswiderstand: 0.01 Qualifikation: - SVHC: Lead (19-Jan-2021) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| ATP302-TL-H | ON Semiconductor | Trans MOSFET P-CH Si 60V 70A Automotive 3-Pin(2+Tab) ATPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| ATP302-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 60V 70A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
Description: MOSFET P-CH 60V 70A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| ATP302-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 60V 70A ATPAK
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: ATPAK
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
Description: MOSFET P-CH 60V 70A ATPAK
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: ATPAK
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
товару немає в наявності
В кошику
од. на суму грн.
| ATP302-TL-H |
|
Виробник: ONSEMI
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 70
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 70
Gate-Source-Schwellenspannung, max.: 2.6
Verlustleistung: 70
Bauform - Transistor: ATPAK
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.01
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.01
SVHC: Lead (19-Jan-2021)
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 70
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 70
Gate-Source-Schwellenspannung, max.: 2.6
Verlustleistung: 70
Bauform - Transistor: ATPAK
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.01
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.01
SVHC: Lead (19-Jan-2021)
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| ATP302-TL-H |
|
Виробник: ONSEMI
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage
Verlustleistung: 70
Kanaltyp: p-Kanal
Drain-Source-Durchgangswiderstand: 0.01
Qualifikation: -
SVHC: Lead (19-Jan-2021)
Description: ONSEMI - ATP302-TL-H - Leistungs-MOSFET, p-Kanal, 60 V, 70 A, 0.01 ohm, ATPAK, Oberflächenmontage
Verlustleistung: 70
Kanaltyp: p-Kanal
Drain-Source-Durchgangswiderstand: 0.01
Qualifikation: -
SVHC: Lead (19-Jan-2021)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| ATP302-TL-H |
Виробник: ON Semiconductor
Trans MOSFET P-CH Si 60V 70A Automotive 3-Pin(2+Tab) ATPAK T/R
Trans MOSFET P-CH Si 60V 70A Automotive 3-Pin(2+Tab) ATPAK T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.