Технічний опис ATP404-TL-H ON Semiconductor
Description: MOSFET N-CH 60V 95A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Ta), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V, Power Dissipation (Max): 70W (Tc), Supplier Device Package: ATPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V.
Інші пропозиції ATP404-TL-H за ціною від 53.55 грн до 53.55 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| ATP404-TL-H | Виробник : ONSEMI |
 Description: ONSEMI - ATP404-TL-H - POWER FIELD-EFFECT TRANSISTORtariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 883 шт: термін постачання 21-31 дні (днів) |
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ATP404-TL-H | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 60V 95A 3-Pin(2+Tab) ATPAK T/R |
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ATP404-TL-H | Виробник : onsemi |
Description: MOSFET N-CH 60V 95A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V Power Dissipation (Max): 70W (Tc) Supplier Device Package: ATPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V |
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ATP404-TL-H | Виробник : onsemi |
Description: MOSFET N-CH 60V 95A ATPAK Packaging: Cut Tape (CT) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Ta) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V Power Dissipation (Max): 70W (Tc) Supplier Device Package: ATPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V |
товар відсутній |