AUIRF1018ES International Rectifier
Виробник: International RectifierDescription: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Qualification: AEC-Q101
на замовлення 12661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 237+ | 95.44 грн |
Відгуки про товар
Написати відгук
Технічний опис AUIRF1018ES International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції AUIRF1018ES
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AUIRF1018ES | Виробник : Infineon / IR |
MOSFET 60V 79A 8.4 mOhm Automotive MOSFET |
на замовлення 2053 шт: термін постачання 21-30 дні (днів) |
|
 |
AUIRF1018ES | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 60V 79A Automotive 3-Pin(2+Tab) D2PAK Tube |
товару немає в наявності |
|
 |
AUIRF1018ES | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 79A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |