AUIRF1324S-7P

AUIRF1324S-7P Infineon Technologies


3733901562236365auirf1324s-7p.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 24V 429A Automotive 7-Pin(6+Tab) D2PAK Tube
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Технічний опис AUIRF1324S-7P Infineon Technologies

Description: MOSFET N-CH 24V 240A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Part Status: Obsolete, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V.

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AUIRF1324S-7P AUIRF1324S-7P Виробник : INFINEON TECHNOLOGIES auirf1324s-7p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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AUIRF1324S-7P AUIRF1324S-7P Виробник : Infineon Technologies auirf1324s-7p.pdf?fileId=5546d462533600a4015355a8ba81136e Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
товар відсутній
AUIRF1324S-7P AUIRF1324S-7P Виробник : INFINEON TECHNOLOGIES auirf1324s-7p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
товар відсутній