AUIRF2903Z

AUIRF2903Z Infineon Technologies


infineon-auirf2903z-ds-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис AUIRF2903Z Infineon Technologies

Description: MOSFET N-CH 30V 160A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V.

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AUIRF2903Z AUIRF2903Z Виробник : Infineon Technologies auirf2903z.pdf?fileId=5546d462533600a4015355ac2af61392 Description: MOSFET N-CH 30V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
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AUIRF2903Z AUIRF2903Z Виробник : Infineon / IR Infineon-AUIRF2903Z-DS-v01_01-EN-1730798.pdf MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
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