Технічний опис AUIRF3805L-7P Infineon / IR
Description: MOSFET N-CH 55V 160A TO262, Packaging: Tube, Package / Case: TO-262-7, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції AUIRF3805L-7P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
AUIRF3805L-7P | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 240A Automotive Tube |
товару немає в наявності |
|
 |
AUIRF3805L-7P | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 160A TO262 Packaging: Tube Package / Case: TO-262-7 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |