AUIRF7207QTR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис AUIRF7207QTR Infineon Technologies
Description: MOSFET P-CH 20V 5.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції AUIRF7207QTR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
AUIRF7207QTR | Infineon / IR |
MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms |
товару немає в наявності |
В кошику од. на суму грн. |
| AUIRF7207QTR |
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Виробник: Infineon / IR
MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms
MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms
товару немає в наявності
В кошику
од. на суму грн.



