AUIRF7316QTR Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 198.17 грн |
| 10+ | 169.40 грн |
| 25+ | 136.03 грн |
| 100+ | 117.00 грн |
| 250+ | 112.77 грн |
| 500+ | 107.84 грн |
| 4000+ | 100.79 грн |
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Технічний опис AUIRF7316QTR Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs.
Інші пропозиції AUIRF7316QTR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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AUIRF7316QTR | Infineon Technologies |
 Description: MOSFET 2P-CH 30V 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| AUIRF7316QTR |
|
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
на замовлення 1 шт:
термін постачання 21-31 дні (днів)