AUIRF7319QTR

AUIRF7319QTR Infineon Technologies


3733558230884474auirf7319q.pdf Виробник: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 6.5A/4.9A Automotive 8-Pin SOIC T/R
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Технічний опис AUIRF7319QTR Infineon Technologies

Description: MOSFET N/P-CH 30V 6.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

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AUIRF7319QTR AUIRF7319QTR Виробник : Infineon Technologies AUIRF7319Q.pdf Description: MOSFET N/P-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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AUIRF7319QTR AUIRF7319QTR Виробник : Infineon / IR auirf7319q-1730806.pdf MOSFET AUTO 30V DUAL N P-CH HEXFET
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