AUIRF7341QTR Infineon Technologies
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 51+ | 229.18 грн |
| 58+ | 202.39 грн |
| 100+ | 183.54 грн |
| 200+ | 175.07 грн |
| 500+ | 142.62 грн |
| 1000+ | 124.15 грн |
| 2000+ | 113.1 грн |
| 4000+ | 106.3 грн |
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Технічний опис AUIRF7341QTR Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRF7341QTR
| Фото | Назва | Виробник | Інформація |
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AUIRF7341QTR | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 5.1A Automotive 8-Pin SOIC T/R |
товар відсутній |
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AUIRF7341QTR | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 29nC Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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AUIRF7341QTR | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 55V 5.1A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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AUIRF7341QTR | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 29nC Kind of channel: enhanced |
товар відсутній |