AUIRF7640S2TR Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4800+ | 45.19 грн |
Відгуки про товар
Написати відгук
Технічний опис AUIRF7640S2TR Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: DIRECTFET SB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRF7640S2TR за ціною від 43.29 грн до 176.20 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AUIRF7640S2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 5.8A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4867 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
AUIRF7640S2TR | Виробник : Infineon Technologies |
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 36mOhms |
на замовлення 4790 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
AUIRF7640S2TR | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 60V 5.8A Automotive 6-Pin Direct-FET SB T/R |
товару немає в наявності |
|||||||||||||||
 |
AUIRF7640S2TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 30W |
товару немає в наявності |