AUIRF7640S2TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис AUIRF7640S2TR Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: DIRECTFET SB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRF7640S2TR за ціною від 43.28 грн до 164.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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AUIRF7640S2TR | Infineon Technologies |
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 36mOhms |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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AUIRF7640S2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 5.8A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4867 шт: термін постачання 21-31 дні (днів) |
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| AUIRF7640S2TR |
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Виробник: Infineon Technologies
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 36mOhms
MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 36mOhms
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 160.35 грн |
| 10+ | 88.35 грн |
| 100+ | 55.33 грн |
| 500+ | 46.24 грн |
| 1000+ | 44.26 грн |
| 2500+ | 43.28 грн |
| AUIRF7640S2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4867 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 164.14 грн |
| 10+ | 100.94 грн |
| 100+ | 68.68 грн |
| 500+ | 51.48 грн |
| 1000+ | 47.31 грн |
| 2000+ | 46.55 грн |