AUIRF7669L2TR Infineon Technologies

Description: MOSFET N-CH 100V 19A DIRECTFET, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric L8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DirectFET™ Isometric L8.