AUIRF7675M2TR INFINEON
Виробник: INFINEONDescription: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: DirectFET M2
Anzahl der Pins: 7Pin(s)
Produktpalette: HEXFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.047ohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 4253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 133.96 грн |
| 500+ | 112.43 грн |
| 1000+ | 93.48 грн |
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Технічний опис AUIRF7675M2TR INFINEON
Description: MOSFET N-CH 150V 4.4A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V, Power Dissipation (Max): 2.7W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DirectFET™ Isometric M2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRF7675M2TR за ціною від 93.48 грн до 298.10 грн
| Фото | Назва | Виробник | Інформація |
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AUIRF7675M2TR | Виробник : International Rectifier |
Description: AUIRF7675M2 - 120V-300V N-CHANNE Packaging: Bulk Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : INFINEON |
Description: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: DirectFET M2 Anzahl der Pins: 7Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 4253 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : Infineon Technologies |
MOSFETs 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 |
на замовлення 4538 шт: термін постачання 21-30 дні (днів) |
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AUIRF7675M2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 4.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 150V 4.4A Automotive 7-Pin Direct-FET M2 T/R |
товару немає в наявності |
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AUIRF7675M2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 4.4A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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AUIRF7675M2TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 45W |
товару немає в наявності |