AUIRF7736M2TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
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Технічний опис AUIRF7736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DirectFET™ Isometric M4, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric M4, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V.
Інші пропозиції AUIRF7736M2TR за ціною від 125.00 грн до 315.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF7736M2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 22A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: DirectFET™ Isometric M4 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Cut Tape (CT) |
на замовлення 4993 шт: термін постачання 21-31 дні (днів) |
|
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| AUIRF7736M2TR | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - AUIRF7736M2TR - AUIRF7736M2 20V-40V N-CHANNEL AUTOMOTIVEtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 7808 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 153 шт В кошику од. на суму грн. |
| AUIRF7736M2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 315.17 грн |
| 10+ | 200.93 грн |
| 100+ | 142.43 грн |
| 500+ | 125.00 грн |
| AUIRF7736M2TR |
![]() |
Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - AUIRF7736M2TR - AUIRF7736M2 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - AUIRF7736M2TR - AUIRF7736M2 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 7808 шт:
термін постачання 21-31 дні (днів)


