AUIRF7736M2TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 4800+ | 110.88 грн |
Відгуки про товар
Написати відгук
Технічний опис AUIRF7736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DirectFET™ Isometric M4, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric M4, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V.
Інші пропозиції AUIRF7736M2TR за ціною від 122.65 грн до 311.17 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AUIRF7736M2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 22A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: DirectFET™ Isometric M4 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric M4 Packaging: Cut Tape (CT) |
на замовлення 13922 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
AUIRF7736M2TR | Виробник : Infineon Technologies |
MOSFETs 40V AUTOGRADE 1 N-CH HEXFET 3mOhms |
товару немає в наявності |
|||||||||||
 |
AUIRF7736M2TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 108A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 63W Technology: HEXFET® |
товару немає в наявності |