AUIRF8736M2TR Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 40V 27A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 347.77 грн |
| 10+ | 222.47 грн |
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Технічний опис AUIRF8736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 27A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M4, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 150µA, Supplier Device Package: DirectFET™ Isometric M4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
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AUIRF8736M2TR | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 40V 27A Automotive 9-Pin Direct-FET M4 T/R |
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AUIRF8736M2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 27A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 85A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6867 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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