AUIRFN7107TR Infineon Technologies
Виробник: Infineon TechnologiesDescription: AUIRFN7107 - 75V-100V N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 245+ | 80.78 грн |
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Технічний опис AUIRFN7107TR Infineon Technologies
Description: AUIRFN7107 - 75V-100V N-CHANNEL, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V, Power Dissipation (Max): 4.4W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V.
Інші пропозиції AUIRFN7107TR за ціною від 65.43 грн до 182.89 грн
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ | ||||||||||||||
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AUIRFN7107TR | Виробник : International Rectifier |
Description: AUTOMOTIVE POWER MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Power Dissipation (Max): 4.4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V |
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AUIRFN7107TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6 Kind of package: reel Case: PQFN5X6 Drain-source voltage: 75V Drain current: 53A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 51nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
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