AUIRFN8405TR International Rectifier HiRel Products
| Кількість | Ціна без ПДВ |
|---|---|
| 237+ | 149.69 грн |
| 500+ | 142.61 грн |
| 1000+ | 134.36 грн |
| 10000+ | 121.61 грн |
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Технічний опис AUIRFN8405TR International Rectifier HiRel Products
Description: MOSFET N-CH 40V 95A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 3.3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5142 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRFN8405TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AUIRFN8405TR | Infineon Technologies |
 Description: MOSFET N-CH 40V 95A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5142 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
AUIRFN8405TR | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
AUIRFN8405TR | INFINEON |
Description: INFINEON - AUIRFN8405TR - Leistungs-MOSFET, AEC-Q101, n-Kanal, 40 V, 187 A, 0.0016 ohm, PQFN, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 187 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 136 Gate-Source-Schwellenspannung, max.: 3.9 Verlustleistung: 136 Bauform - Transistor: PQFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0016 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0016 SVHC: No SVHC (08-Jul-2021) |
товару немає в наявності |
В кошику од. на суму грн. |
| AUIRFN8405TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 95A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 95A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5142 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AUIRFN8405TR |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| AUIRFN8405TR |
|
Виробник: INFINEON
Description: INFINEON - AUIRFN8405TR - Leistungs-MOSFET, AEC-Q101, n-Kanal, 40 V, 187 A, 0.0016 ohm, PQFN, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 187
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 136
Gate-Source-Schwellenspannung, max.: 3.9
Verlustleistung: 136
Bauform - Transistor: PQFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0016
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0016
SVHC: No SVHC (08-Jul-2021)
Description: INFINEON - AUIRFN8405TR - Leistungs-MOSFET, AEC-Q101, n-Kanal, 40 V, 187 A, 0.0016 ohm, PQFN, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 187
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 136
Gate-Source-Schwellenspannung, max.: 3.9
Verlustleistung: 136
Bauform - Transistor: PQFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0016
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0016
SVHC: No SVHC (08-Jul-2021)
товару немає в наявності
В кошику
од. на суму грн.