AUIRFR3504Z ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - AUIRFR3504Z - AUIRFR3504 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
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Технічний опис AUIRFR3504Z ROCHESTER ELECTRONICS
Description: MOSFET N-CH 40V 42A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V.
Інші пропозиції AUIRFR3504Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AUIRFR3504Z | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate charge: 30nC On-state resistance: 9mΩ Gate-source voltage: ±20V кількість в упаковці: 150 шт |
товару немає в наявності |
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AUIRFR3504Z | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 42A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
товару немає в наявності |
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AUIRFR3504Z | Виробник : Infineon / IR |
MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms |
товару немає в наявності |
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AUIRFR3504Z | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate charge: 30nC On-state resistance: 9mΩ Gate-source voltage: ±20V |
товару немає в наявності |