AUIRFR4292TRL Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 212.97 грн |
| 10+ | 120.77 грн |
| 100+ | 83.87 грн |
| 500+ | 72.60 грн |
| 1000+ | 63.65 грн |
| 3000+ | 57.16 грн |
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Технічний опис AUIRFR4292TRL Infineon Technologies
Description: MOSFET N-CH 250V 9.3A DPAK, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 5V @ 50µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101.
Інші пропозиції AUIRFR4292TRL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
AUIRFR4292TRL | Infineon Technologies |
Description: MOSFET N-CH 250V 9.3A DPAKGrade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 50µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| AUIRFR4292TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 9.3A DPAK
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 9.3A DPAK
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.




