AUIRFR8405 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 211+ | 99.36 грн |
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Технічний опис AUIRFR8405 Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V, Power Dissipation (Max): 163W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRFR8405 за ціною від 99.36 грн до 102.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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AUIRFR8405 | Виробник : International Rectifier |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 13799 шт: термін постачання 21-31 дні (днів) |
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| AUIRFR8405 | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - AUIRFR8405 - AUIRFR8405 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 2883 шт: термін постачання 21-31 дні (днів) |
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AUIRFR8405 | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive 3-Pin(2+Tab) DPAK Tube |
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AUIRFR8405 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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AUIRFR8405 | Виробник : Infineon Technologies |
MOSFETs Auto 40V N-Ch FET 1.98mOhms 100A |
товару немає в наявності |