AUIRFS3006-7P Infineon Technologies
Виробник: Infineon TechnologiesTrans MOSFET N-CH Si 60V 293A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK Tube
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Технічний опис AUIRFS3006-7P Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V.
Інші пропозиції AUIRFS3006-7P
| Фото | Назва | Виробник | Інформація |
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AUIRFS3006-7P | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 60V 293A Automotive 7-Pin(6+Tab) D2PAK Tube |
товар відсутній |
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AUIRFS3006-7P | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V |
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| AUIRFS30067P | Виробник : International Rectifier |
Description: MOSFET N-CH 60V 240A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V |
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AUIRFS3006-7P | Виробник : Infineon Technologies |
MOSFET 60V 293A 2.1 mOhm Automotive MOSFET |
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