AUIRFS3107-7P Infineon Technologies
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
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Технічний опис AUIRFS3107-7P Infineon Technologies
Description: MOSFET N-CH 75V 240A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V.
Інші пропозиції AUIRFS3107-7P
| Фото | Назва | Виробник | Інформація |
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AUIRFS3107-7P | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 190A Power dissipation: 370W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRFS3107-7P | Виробник : International Rectifier |
Description: AUIRFS3107 - 55V-60V N-CHANNEL A Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
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AUIRFS3107-7P | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
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AUIRFS3107-7P | Виробник : Infineon Technologies |
MOSFET 75V 260A 2.6 mOhm Automotive MOSFET |
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AUIRFS3107-7P | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 190A Power dissipation: 370W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |